Jfets 2N5115 product image

2N5115

$29.79
  • Description:JFET P-CH 30V TO18
  • Series:-

SKU:eecefa8e6862 Category: Brand:

  
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2N5115 is listed in the Jfets range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is JFET P-CH 30V TO18. Review the specifications below when checking this part for your BOM.

Jfets specifications for 2N5115

  • Description:JFET P-CH 30V TO18
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • FET Type:P-Channel
  • Voltage - Breakdown (V(BR)GSS):30 V
  • Drain to Source Voltage (Vdss):30 V
  • Current - Drain (Idss) @ Vds (Vgs=0):60 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:6 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds:25pF @ 15V
  • Resistance - RDS(On):100 Ohms
  • Power - Max:500 mW
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-18 (TO-206AA)
  • Grade:Military
  • Qualification:MIL-PRF-19500

Jfets datasheet and documents for 2N5115

2N5115

Jfets Overview

The Microchip Technology 2N5115 is a P-channel silicon small-signal Junction Field-Effect Transistor (JFET) designed for general-purpose applications. It operates in depletion mode and is housed in a TO-18-3 metal can package with three leads. Key electrical specifications include a drain-source breakdown voltage of 30 V, a gate-source breakdown voltage of 30 V, and a gate-source cutoff voltage of 6 V. The device supports a maximum power dissipation of 500 mW and maintains an on-resistance of 100 Ohms at zero gate-source voltage. It functions reliably within an extended temperature range from -65°C to +200°C.

Jfets Feature Summary

  • P-channel silicon construction for stable small-signal operation
  • Low-profile cylindrical metal can packaging suitable for through-hole mounting
  • High thermal stability supporting extreme operating temperatures up to 200°C

Jfets Applications

  • General-purpose analog signal switching
  • Low-noise preamplifier stages
  • Impedance matching circuits

Jfets Procurement Notes

Verify the specific manufacturer source, as the 2N5115 designation has been produced by multiple semiconductor vendors including Microchip and Microsemi. Confirm that the component meets the required JEDEC registration standards or military screening specifications if high reliability is necessary. Ensure the package type matches the intended PCB footprint before ordering.

Jfets Selection Notes

Select this component when a P-channel JFET with a 30V breakdown rating and low input capacitance is required. The TO-18 package is appropriate for designs utilizing traditional through-hole assembly methods. Consider the 500mW power dissipation limit and the -65°C to +200°C operating range to ensure compatibility with the system's thermal environment.

Jfets Part Context

The 2N5115 belongs to a family of standard P-channel JFETs often compared to devices like the 2N5415. While the 2N5415 is a bipolar junction transistor (BJT), the 2N5115 utilizes field-effect technology, offering distinct input impedance characteristics. This part serves as a fundamental discrete semiconductor component for analog circuit design.

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