2SB1011

Single Bipolar Transistors Overview

The Panasonic 2SB1011 is a silicon PNP triple diffusion planar type transistor designed for low-frequency output amplification. It operates in a TO-126B-A1 package with three leads: emitter, collector, and base. The device supports a maximum collector-base voltage of -400 V and a collector-emitter voltage of -400 V. It handles a continuous collector current of -100 mA and dissipates up to 1.2 W of power at 25°C ambient temperature. The transition frequency reaches 70 MHz, and the forward current transfer ratio ranges from 30 to an unspecified upper limit under standard test conditions.

Single Bipolar Transistors Feature Summary

• High collector-base and collector-emitter voltage ratings suitable for high-voltage switching applications
• Triple diffusion planar construction providing stable electrical characteristics
• Low collector-emitter saturation voltage for efficient power handling

Single Bipolar Transistors Applications

• Low-frequency output amplification circuits
• General electronic equipment such as office machines and measuring instruments
• Communications equipment signal processing

Single Bipolar Transistors Procurement Notes

Verify the current lifecycle status before procurement, as the datasheet indicates potential maintenance or discontinuation phases. Confirm that the specific batch complies with the RoHS Directive (EU 2002/95/EC). Ensure the supplier provides the latest Product Standards, as specifications are subject to change without notice. Validate that the component meets the required absolute maximum ratings for your specific operating environment.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage isolation with moderate current capabilities. The TO-126B-A1 package facilitates through-hole mounting. Consider the thermal resistance characteristics when designing heat dissipation strategies, as power dissipation decreases significantly above 25°C ambient temperature. Ensure the base drive current is sufficient to maintain the transistor within the specified saturation voltage limits during operation.

Single Bipolar Transistors Part Context

This component belongs to Panasonic's lineup of silicon PNP transistors intended for general-purpose and industrial applications. It utilizes a triple diffusion planar process to enhance reliability and performance consistency. The device is engineered for robustness in standard electronic environments, distinguishing it from specialized automotive or aerospace-grade semiconductors which require additional qualification protocols.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-referencing requires matching the TO-126B-A1 package, -400V voltage ratings, and PNP polarity. Verify that any alternative component meets the same thermal and electrical constraints defined in the original datasheet.

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage rating?

The maximum collector-base voltage (Emitter open) is rated at -400 V.

What is the transition frequency of the 2SB1011?

The transition frequency (fT) is 70 MHz, measured at VCB = -30 V, IE = 20 mA, and f = 200 MHz.

Is this component compliant with environmental directives?

Yes, the product complies with the RoHS Directive (EU 2002/95/EC).