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2SB1295-6-TB-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is PNP SILICON TRANSISTOR. Review the specifications below when checking this part for your BOM.
The onsemi 2SB1295-6-TB-E is a small signal PNP silicon bipolar junction transistor designed for surface-mount applications. It features a maximum collector current of 0.8 A and a collector-emitter breakdown voltage of 15 V. The device offers a minimum DC current gain (hFE) of 200, ensuring reliable amplification in low-power circuits. With a maximum power dissipation of 0.2 W and an operating junction temperature up to 150°C, it provides robust performance in compact designs.
Verify the specific suffix against official manufacturer documentation to confirm pinout compatibility and electrical tolerances. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing design specifications.
Select this component for applications requiring a compact PNP transistor with moderate current handling capabilities. The 15 V rating suits low-voltage logic systems. Evaluate thermal management needs given the 0.2 W power dissipation limit in enclosed PCB environments.
This part belongs to the small-signal bipolar transistor category from onsemi. It utilizes standard silicon technology housed in a three-terminal surface-mount package. The device serves as a fundamental active element for controlling current flow in electronic circuits requiring PNP polarity.
Public confirmed substitute part numbers are not available in verified sources.
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