Single Bipolar Transistors 2SB1302T-TD-E product image

2SB1302T-TD-E

  • Description:TRANS PNP 20V 5A PCP
  • Series:-

SKU:d2eca2d1fc7b Category: Brand:

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2SB1302T-TD-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 20V 5A PCP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1302T-TD-E

  • Description:TRANS PNP 20V 5A PCP
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 60mA, 3A
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 500mA, 2V
  • Power - Max:1.3 W
  • Frequency - Transition:320MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:PCP
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1302T-TD-E

2SB1302T-TD-E

Single Bipolar Transistors Overview

The onsemi 2SB1302T-TD-E is a PNP silicon power transistor designed for high-power audio and linear applications. It features a maximum collector current of 15 A, a collector-emitter voltage rating of 200 V, and a total power dissipation capability of 200 W. The device operates within a temperature range of -65°C to +150°C and utilizes a TO-3P (TO-264AA) through-hole package. Key electrical characteristics include a minimum DC current gain (hFE) of 75 at 8 A and a transition frequency (fT) of 30 MHz.

Single Bipolar Transistors Feature Summary

  • High power handling with 200 W dissipation in a robust TO-3P flange-mount package
  • Designed for low harmonic distortion in high-fidelity audio amplifier circuits
  • High gain linearity maintained across a wide current range from 100 mA to 7 A

Single Bipolar Transistors Applications

  • High-power audio frequency amplifiers
  • Disk head positioners
  • General-purpose linear applications requiring high current drive

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TD-E' against official documentation to confirm tape-and-reel packaging and lead-free status. Ensure compatibility with existing thermal management designs for the TO-3P case. Confirm RoHS compliance details via the manufacturer's material declaration before integration.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high current gain and low distortion in PNP configurations. Compare its 200 V rating and 15 A limit against circuit requirements. Consider the thermal resistance of the TO-3P package for heat sink sizing. Verify complementary NPN pairing if used in push-pull stages.

Single Bipolar Transistors Part Context

This part belongs to the MJL1302 series of power transistors manufactured by onsemi. It serves as the PNP counterpart to the MJL3281A NPN transistor. The series is engineered specifically for high-performance audio and linear power applications, offering matched gain characteristics for balanced circuit operation.

Single Bipolar Transistors Replacement Considerations

The MJL1302A is a documented complementary device within the same product family. Verify pinout and thermal specifications match before substitution. Check for any differences in hFE grading or packaging suffixes that may affect mechanical fit.

2SB1302T-TD-E2SB1302T-TD-E

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