2SB1570

Single Bipolar Transistors Overview

The Sanken Electric 2SB1570 is a Silicon PNP Epitaxial Planar Darlington Transistor designed for audio, series regulator, and general-purpose applications. It features a maximum collector current of 12 A and a collector-emitter voltage rating of -150 V. The device provides a minimum DC current gain (hFE) of 5000 at IC = -7 A and VCE = -4 V. Key electrical characteristics include a typical transition frequency (fT) of 50 MHz and a maximum power dissipation of 150 W at a case temperature of 25°C. The transistor utilizes the MT-200 flange mount package.

Single Bipolar Transistors Feature Summary

• High DC current gain capability with a minimum hFE of 5000 under rated conditions
• Robust thermal performance supporting up to 150 W power dissipation with appropriate heatsinking
• Complementary design matched to the 2SD2401 NPN transistor for balanced circuit implementation

Single Bipolar Transistors Applications

• Audio amplifier circuits
• Series voltage regulators
• General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank suffix (O, P, or Y) required for your application, as these denote distinct gain ranges. Confirm that the MT-200 package dimensions align with your mechanical constraints. Ensure thermal management solutions account for the specified derating curves to maintain junction temperatures within the -55°C to +150°C operating range during operation.

Single Bipolar Transistors Selection Notes

Select this component when high current handling and substantial voltage blocking are required in a single-ended configuration. The Darlington structure offers significant current amplification, reducing base drive requirements compared to standard bipolar transistors. Consider the complementary 2SD2401 if a push-pull output stage is being designed to ensure matched performance characteristics between the NPN and PNP devices.

Single Bipolar Transistors Part Context

This part belongs to Sanken Electric's lineup of high-power silicon planar transistors. It serves as the PNP counterpart to the 2SD2401 NPN transistor, facilitating symmetrical design in power stages. The MT-200 package provides an isolated mounting surface for efficient heat transfer to external cooling systems, distinguishing it from smaller signal transistor packages.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: None identified.