2SB562CTZ-E

Single Bipolar Transistors Overview

The 2SB562CTZ-E is a silicon PNP epitaxial small signal bipolar junction transistor manufactured by Renesas Electronics Corporation. It is designed for through-hole mounting in a TO-92MOD package, specifically the TO-226-3 Long Body configuration with three pins. The device features a collector-base breakdown voltage of 20 V and a continuous collector current rating of 1 A. Key electrical specifications include a transition frequency of 350 MHz and a maximum power dissipation of 900 mW. This component serves as a single-element PNP silicon transistor suitable for general-purpose switching and amplification applications.

Single Bipolar Transistors Feature Summary

• Utilizes silicon PNP epitaxial construction for reliable small-signal performance
• Supports high-speed operation with a 350 MHz transition frequency
• Handles significant current loads up to 1 A with 20 V breakdown capability
• Designed for robust thermal management with 900 mW power dissipation

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• High-speed switching applications requiring fast response times
• Consumer electronics requiring compact through-hole transistor solutions
• Industrial control systems utilizing standard bipolar logic interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TZ-E' against the manufacturer's latest documentation to confirm availability status and exact pinout configuration. Ensure that the TO-92MOD package dimensions align with the target PCB footprint requirements. Cross-reference the part number with official Renesas databases to validate current production status, as distribution channels may list varying stock levels or obsolete classifications. Confirm compliance with relevant export control regulations if applicable to the intended deployment region.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 1 A current capacity and 20 V voltage rating is required in a through-hole format. The 350 MHz frequency makes it suitable for applications demanding faster switching speeds than standard low-frequency transistors. Consider the TO-92MOD package size constraints and thermal dissipation needs relative to the 900 mW limit. Evaluate alternative packages if surface-mount technology is preferred, though this specific model is optimized for leaded mounting environments.

Single Bipolar Transistors Part Context

This transistor belongs to the 2SB562 series of small signal bipolar devices produced by Renesas Electronics. The series includes variants such as 2SB562C and 2SB562CTZ, with the TZ-E suffix denoting specific packaging and environmental compliance attributes. These components are widely used in analog and digital circuits where reliable PNP switching is necessary. The product line emphasizes cost-effective solutions for mass-produced consumer and industrial electronic equipment.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same family include the 2SB562C and 2SB562CTZ models. Verify that any replacement maintains identical electrical parameters, particularly the 20 V breakdown and 1 A current ratings. Ensure the physical package matches the TO-92MOD specification to fit existing board layouts. Consult official cross-reference lists for approved equivalents that meet the same reliability standards.