2SB858C-E

Single Bipolar Transistors Overview

The 2SB858C-E is a silicon PNP triple-diffused power bipolar transistor manufactured by Renesas Electronics Corporation. It features a maximum collector current of 4A and a collector-emitter breakdown voltage of 50V. The device is housed in a TO-220AB flange mount package with plastic/epoxy encapsulation, where the collector is connected to the metal flange for heat dissipation. It operates at junction temperatures up to 150°C and has a minimum DC current gain (hFE) of 100.

Single Bipolar Transistors Feature Summary

• High collector current capability of 4A for robust power handling
• Flange-mounted TO-220AB package facilitates efficient thermal management via direct heatsink mounting
• Triple-diffused silicon construction ensures stable performance in power applications

Single Bipolar Transistors Applications

• Low frequency power amplifier complementary pairs
• General purpose power switching circuits
• Audio output stages requiring high current drive

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'E' against official Renesas documentation to confirm environmental compliance status, as standard 2SB858 variants may differ. Confirm that the TO-220AB package orientation matches your PCB footprint design. Ensure thermal interface material compatibility with the exposed collector flange for optimal heat transfer in your application.

Single Bipolar Transistors Selection Notes

Select this component when designing low-frequency power amplifiers or switching loads requiring up to 4A continuous current. The 50V rating suits low-voltage power supply applications. Consider the TO-220AB package size for adequate heatsinking space. Compare hFE requirements against load specifications to ensure sufficient base drive current is available for saturation or linear operation modes.

Single Bipolar Transistors Part Context

The 2SB858 series complements the 2SD1133/2SD1134 NPN transistors to form matched complementary pairs for push-pull amplifier configurations. This family is designed for audio and general-purpose power amplification tasks. The triple-diffused technology provides improved reliability compared to standard diffusion methods, making it suitable for demanding analog signal processing environments.

Single Bipolar Transistors Replacement Considerations

Official substitutes include the 2SB857 and 2SB858 standard variants. Verify pinout compatibility and electrical parameter tolerances before substitution. Cross-reference with other PNP power transistors in the TO-220AB package only if absolute maximum ratings are exceeded or insufficient.