2SC1008-R-AP

Single Bipolar Transistors Overview

The MCC 2SC1008-R-AP is an NPN silicon epitaxial transistor designed for general-purpose switching and amplification applications. It features a collector-emitter breakdown voltage of 60 Vdc and a collector-base breakdown voltage of 80 Vdc. The device supports a maximum collector current of 0.7 A and dissipates up to 0.8 Watts of power. DC current gain ranges from 120 to 240, with a transition frequency of 30 MHz. It utilizes a TO-92 package with straight leads and operates within standard ambient temperature conditions.

Single Bipolar Transistors Feature Summary

• General-purpose switching and amplification capabilities
• Lead-free finish compliant with RoHS standards
• Epoxy casing meeting UL 94 V-0 flammability rating
• Moisture sensitivity level 1 classification

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Low-power electronic switching applications
• Consumer electronics internal control stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix configuration when ordering, as the -AP designation indicates ammo pack packaging containing two thousand pieces per box. Confirm that the R bin selection aligns with required gain specifications. Ensure procurement channels are authorized distributors to guarantee genuine parts with full traceability and adherence to MCC quality standards for handling and storage.

Single Bipolar Transistors Selection Notes

Select this component for low-voltage applications requiring moderate current handling and reliable switching performance. The TO-92 through-hole package facilitates easy integration into standard printed circuit boards. Consider the specified hFE range for biasing requirements in amplifier designs. Evaluate thermal management needs against the 0.8-watt power dissipation limit during continuous operation.

Single Bipolar Transistors Part Context

This transistor belongs to the 2SC1008 series manufactured by Micro Commercial Components. The series includes variants distinguished by gain bins such as O, Y, G, and R. The R bin specifically provides a DC current gain range between 120 and 240. This family is widely used in basic analog and digital logic interface circuits due to its robust construction and standardized pinout.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other NPN transistors with similar voltage and current ratings, such as the 2N3904 or BC547, provided the package type and gain characteristics meet the design constraints. Verify pin compatibility and thermal resistance values before implementation.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SC1008-R variant?

The 2SC1008-R variant has a DC current gain (hFE) range of 120 to 240 when tested at IC=50mA and VCE=2V.

Does the -AP suffix indicate a change in electrical function?

No, the -AP suffix only denotes the packaging format, specifically ammo packing with two thousand pieces per box, without altering the electrical characteristics.

What is the maximum power dissipation capability of this device?

The device is capable of dissipating 0.8 Watts of power under standard operating conditions.