2SC1008-Y-AP

Single Bipolar Transistors Overview

The MCC 2SC1008-Y-AP is an NPN silicon epitaxial transistor designed for general-purpose switching and amplification applications. It features a collector-emitter breakdown voltage of 60 Vdc, a collector-base voltage of 80 Vdc, and a maximum collector current of 0.7 A. The device provides a DC current gain (hFE) range of 120 to 240 at 50 mA and 2 Vdc, with a transition frequency of 30 MHz. Power dissipation capability is rated at 0.8 Watts in a TO-92 package.

Single Bipolar Transistors Feature Summary

• NPN silicon epitaxial construction optimized for general-purpose switching and amplification tasks
• High power dissipation capacity of 0.8 Watts within a compact TO-92 through-hole package
• Epoxy casing meets UL 94 V-0 flammability rating for enhanced safety compliance

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Low-frequency electronic switching applications
• Consumer electronics internal control logic

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix '-AP' confirms ammo pack packaging containing 2,000 pieces per box. Confirm the 'Y' bin designation ensures the hFE gain falls strictly between 120 and 240. Ensure the absence of the '-HF' suffix indicates standard halogen content if required by project specifications. Cross-reference the datasheet revision date against manufacturing lot codes for traceability.

Single Bipolar Transistors Selection Notes

Select this component when a moderate current handling capability of 0.7 A is required alongside a 60 V collector-emitter voltage rating. The Y-bin selection is appropriate for designs needing guaranteed mid-range current gains without requiring high-gain bins. Consider the TO-92 form factor for manual assembly or low-density PCB layouts where surface mount options are unsuitable.

Single Bipolar Transistors Part Context

This part belongs to the 2SC1008 series of NPN transistors manufactured by Micro Commercial Components. The series utilizes silicon epitaxial technology to deliver reliable performance in standard electronic assemblies. The -AP suffix specifically denotes the ammo pack packaging format, distinguishing it from bulk distribution methods.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other 2SC1008 variants such as the 2SC1008-G or 2SC1008-R, provided their respective hFE gain ranges align with circuit requirements. Generic equivalents like the 2SC1815 may be considered if lower current ratings are acceptable.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SC1008-Y variant?

The 2SC1008-Y variant has a DC current gain (hFE) range of 120 to 240 when tested at IC=50mA and VCE=2V.

Does the -AP suffix change the electrical function of the transistor?

No, the -AP suffix only designates the ammo pack packaging format containing 2,000 pieces per box and does not alter electrical characteristics.

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is 60 Vdc under conditions of IC=10mA and IB=0.