2SC2001-L-AP

Single Bipolar Transistors Overview

The 2SC2001-L-AP is an NPN silicon plastic-encapsulated transistor manufactured by Micro Commercial Components. It features a collector current of 0.7A and a collector-base voltage of 30V, with power dissipation rated at 0.6W. The device operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 135 to 270 for the 'L' rank, a collector-emitter saturation voltage of 0.6V maximum, and a transition frequency of 50MHz minimum.

Single Bipolar Transistors Feature Summary

• Plastic encapsulation meets UL 94 V-0 flammability rating
• Moisture sensitivity level 1 classification
• Lead-free finish and RoHS compliant construction

Single Bipolar Transistors Applications

• General-purpose switching applications
• Amplifier circuits requiring moderate current drive
• Low-voltage logic interface stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix configuration against official distributor catalogs to ensure compliance with environmental standards such as RoHS or halogen-free requirements. Confirm that the ordering code matches the intended packaging format, distinguishing between bulk and ammo pack quantities. Cross-reference manufacturer documentation to validate authenticity and traceability before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when circuit designs require an NPN transistor capable of handling up to 0.7A collector current with a 30V breakdown voltage. The specified hFE range suits applications needing predictable amplification factors without excessive gain variability. Ensure thermal management aligns with the 0.6W power dissipation limit under expected operating conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2001 series of NPN silicon transistors produced by Micro Commercial Components. The series offers standard TO-92 packaging suitable for through-hole mounting. Variants within the series are differentiated primarily by their DC current gain rankings and specific packaging configurations provided by the manufacturer.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SC2001-M and 2SC2001-K variants, which share identical electrical specifications but differ in hFE gain ranges. Verify pinout compatibility and package dimensions when considering alternative manufacturers' equivalents.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SC2001-L variant?

The DC current gain (hFE) for the 2SC2001-L rank ranges from 135 to 270 when measured at IC=100mA and VCE=1.0V.

Does the -AP suffix indicate a specific packaging type?

Yes, the -AP suffix designates Ammo Packing, which typically contains 20,000 pieces per carton according to manufacturer specifications.

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage is 0.6V, measured at IC=700mA and IB=70mA.