2SC2229-O(T6MIT1FM

Single Bipolar Transistors Overview

The Toshiba 2SC2229-O is a silicon NPN triple diffused transistor utilizing the PCT process, housed in a JEDEC TO-92MOD package. It features a minimum collector-emitter breakdown voltage of 150 V and a maximum collector current of 50 mA. The device exhibits a typical transition frequency of 120 MHz and a maximum output capacitance of 5.0 pF. DC current gain (hFE) for the 'O' classification ranges from 70 to 140 at 10 mA and 5 V. Maximum power dissipation is 800 mW with a junction temperature rating up to 150 °C.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability suitable for demanding switching environments
• Low output capacitance supporting high-frequency signal integrity
• High transition frequency enabling effective operation in RF stages

Single Bipolar Transistors Applications

• Black and white TV video output circuits
• High-voltage switching applications
• Driver stage audio amplifier designs

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm environmental compliance status, such as RoHS compatibility, as indicated by lot number markings. Confirm that the 'O' hFE binning matches circuit requirements. Review the manufacturer's reliability handbook for derating guidelines under heavy loads or extreme thermal conditions before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with low parasitic capacitance is required for video or driver stages. Ensure the 50 mA continuous collector current limit accommodates peak load demands. Verify that the TO-92MOD package dimensions fit the target PCB layout constraints. Consider the 800 mW power dissipation limit relative to ambient operating temperatures and available heat sinking solutions.

Single Bipolar Transistors Part Context

This device belongs to Toshiba's discrete semiconductor transistor lineup, specifically designed using the PCT (Plasma Crystal Technology) triple diffused process. This manufacturing technique enhances performance characteristics compared to standard diffusion methods, providing improved breakdown voltage stability and lower noise figures essential for precision analog and video signal processing tasks.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba cross-reference lists for verified substitutes. Generic replacements must match the 150 V VCEO rating, 50 mA IC limit, and TO-92MOD footprint. Verify that alternative parts meet the 120 MHz fT requirement and similar hFE gain bands to ensure functional equivalence in existing designs.