Single Bipolar Transistors 2SC2229-O(T6SAN2FM product image

2SC2229-O(T6SAN2FM

  • Description:TRANS NPN 150V 0.05A TO-92MOD
  • Series:-

SKU:0cf0962c241e Category: Brand:

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2SC2229-O(T6SAN2FM is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 150V 0.05A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2229-O(T6SAN2FM

  • Description:TRANS NPN 150V 0.05A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):50 mA
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • Power - Max:800 mW
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2229-O(T6SAN2FM

2SC2229-O(T6SAN2FM

Single Bipolar Transistors Overview

The Toshiba 2SC2229-O is a silicon NPN triple diffused transistor utilizing the PCT process. It features a collector-emitter breakdown voltage of 150 V and a maximum collector current of 50 mA. The device offers a typical transition frequency of 120 MHz and a maximum collector output capacitance of 5.0 pF. DC current gain ranges from 70 to 140 for the 'O' classification. It operates within a junction temperature range up to 150 °C and dissipates up to 800 mW in a TO-92MOD package.

Single Bipolar Transistors Feature Summary

  • High breakdown voltage capability with a minimum collector-emitter voltage rating of 150 V
  • Low output capacitance designed to minimize signal loading effects
  • High transition frequency suitable for high-speed switching applications

Single Bipolar Transistors Applications

  • Black and White TV video output circuits
  • High-voltage switching applications
  • Driver stages for audio amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the 'O' designation corresponds to the required DC current gain bin (70 to 140) for your design specifications. Ensure the component meets all absolute maximum ratings regarding collector power dissipation and junction temperature during operation.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage handling capabilities combined with low output capacitance. The specified DC current gain range supports standard driver stage requirements. Verify thermal management strategies to ensure collector power dissipation remains within the 800 mW limit under expected operating conditions.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SC series of general-purpose small signal transistors. Manufactured using the PCT process, it is optimized for reliability in consumer electronics. The TO-92MOD package provides a compact form factor suitable for through-hole mounting on printed circuit boards used in television and audio equipment.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba cross-reference data for verified substitutes. Ensure any replacement maintains equivalent collector-emitter voltage ratings and transition frequencies.

2SC2229-O(T6SAN2FM2SC2229-O(T6SAN2FM

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