2SC2229-Y(MIT,F,M)

Single Bipolar Transistors Overview

The 2SC2229-Y(MIT,F,M) is a silicon NPN triple diffused transistor manufactured by Toshiba Semiconductor and Storage using the PCT process. It features a collector-emitter breakdown voltage of 150 V minimum, a collector current rating of 50 mA, and a collector power dissipation of 800 mW. The device exhibits a transition frequency of 120 MHz typical and an output capacitance of 5.0 pF maximum. It operates within a junction temperature range up to 150 °C and is housed in a TO-92MOD package.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability for high-voltage switching applications
• Low output capacitance suitable for video output circuits
• High transition frequency supporting driver stage functions

Single Bipolar Transistors Applications

• Black and White TV Video Output Applications
• High-Voltage Switching Applications
• Driver Stage Audio Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffixes against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility, and lot number marking conventions. Confirm that the requested variant matches the exact electrical classification requirements for your design parameters before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage handling with low current capacity. Ensure the thermal management strategy accommodates the 800 mW power dissipation limit at elevated ambient temperatures. Verify that the required DC current gain falls within the specified Y-classification range for optimal performance in amplifier stages.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2229 series of NPN transistors designed for general electronics applications. It utilizes a triple diffused structure to achieve its electrical characteristics. The device is intended for use in consumer electronics and industrial equipment where reliable high-voltage switching and amplification are required.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba cross-reference documents for verified substitute part numbers. Do not assume functional equivalence with other NPN transistors without verifying pinout, voltage ratings, and package dimensions against the original specifications.

Single Bipolar Transistors FAQ

What is the minimum DC current gain (hFE) for the Y-classification?

For the Y-classification, the minimum DC current gain is 120 when measured at VCE = 5 V and IC = 10 mA.

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is 200 V.

Is this component suitable for aerospace or medical equipment?

No, the product is neither intended nor warranted for use in equipment requiring extraordinarily high levels of quality and reliability, such as aerospace or medical equipment.