Single Bipolar Transistors 2SC2235-O(FA1,F,M) product image

2SC2235-O(FA1,F,M)

  • Description:TRANS NPN 120V 0.8A TO-92MOD
  • Series:-

SKU:d5ca5e934b7b Category: Brand:

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2SC2235-O(FA1,F,M) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 120V 0.8A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2235-O(FA1,F,M)

  • Description:TRANS NPN 120V 0.8A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 100mA, 5V
  • Power - Max:900 mW
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2235-O(FA1,F,M)

2SC2235-O(FA1,F,M)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC2235-O(FA1,F,M) is a silicon NPN epitaxial transistor manufactured using the PCT process. It features a JEDEC TO-92MOD package with a maximum collector-emitter voltage of 120 V, a collector current rating of 800 mA, and a collector power dissipation of 900 mW at 25°C. The device has a transition frequency of 120 MHz and a DC current gain (hFE) range of 80 to 160 for the 'O' classification. It operates within a junction temperature range of -55°C to 150°C.

Single Bipolar Transistors Feature Summary

  • Designed specifically for audio power amplifier applications
  • Functions effectively as a driver stage amplifier
  • Complements the 2SA965 PNP transistor

Single Bipolar Transistors Applications

  • Audio power amplifier circuits
  • Driver stage amplification

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the required hFE binning specifications. Confirm environmental compliance status directly with the manufacturer or authorized distributor, as RoHS compatibility varies by production lot. Ensure the component is sourced from an authorized supply chain to guarantee authenticity and adherence to reliability standards outlined in the Toshiba Semiconductor Reliability Handbook.

Single Bipolar Transistors Selection Notes

Select this component when designing audio power or driver stage amplifiers requiring high voltage handling and moderate current capacity. The TO-92MOD package suits through-hole mounting. Verify that the specific 'O' binning meets the circuit's minimum gain requirements. Consider thermal derating for continuous operation above ambient temperatures to maintain reliability within safe operating area limits.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2235 series of NPN transistors produced by Toshiba Semiconductor and Storage. The series utilizes a silicon epitaxial planar structure optimized for audio frequency performance. The standard 2SC2235 serves as a complementary pair to the 2SA965, facilitating balanced push-pull configurations in general-purpose audio electronics.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA965 as the complementary counterpart. No other direct substitute part numbers are documented in the provided source material.

2SC2235-O(FA1,F,M)2SC2235-O(FA1,F,M)

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