2SC2235-Y(6MBH1,AF

Single Bipolar Transistors Overview

The 2SC2235-Y(6MBH1,AF) is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It features a collector-emitter voltage of 120 V and a maximum collector current of 800 mA. The device has a transition frequency of 120 MHz and a collector power dissipation of 900 mW at 25°C ambient temperature. It utilizes the TO-92MOD package with a junction temperature rating of 150°C.

Single Bipolar Transistors Feature Summary

• Complementary to the 2SA965 PNP transistor for push-pull configurations
• Designed specifically for audio power amplifier applications
• Suitable for use as a driver stage amplifier

Single Bipolar Transistors Applications

• Audio power amplifier circuits
• Driver stage amplification
• General electronics equipment

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate potential variations. Confirm the specific hFE classification suffix 'Y' (120 to 240 gain range) matches design requirements. Check for product discontinuation status before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor is required for audio or driver stages. Ensure the application operates within the 900 mW power dissipation limit and consider thermal derating for temperatures exceeding 25°C. Verify that the 120 MHz transition frequency meets signal bandwidth needs.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2235 series of NPN transistors. It is designed to complement the 2SA965 PNP transistor, facilitating balanced circuit designs in audio and driver applications. The device uses a Silicon Epitaxial Planar (PCT) process for performance stability.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA965 as the complementary counterpart. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 'Y' suffix?

The 'Y' suffix indicates an hFE classification range of 120 to 240.

Is this transistor intended for aerospace or medical use?

No, the document restricts use to general electronics and expressly prohibits use in aerospace, medical, or nuclear facilities.

What is the maximum collector-base voltage?

The absolute maximum rating for collector-base voltage (VCBO) is 120 V.