2SC2235-Y(DNSO,AF)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC2235 is a silicon NPN epitaxial transistor manufactured using the PCT process. It features a collector-emitter voltage of 120 V, a maximum collector current of 800 mA, and a collector power dissipation of 900 mW. The device exhibits a transition frequency of 120 MHz and a DC current gain ranging from 80 to 240 depending on classification. It is housed in a JEDEC TO-92MOD package with a junction temperature rating of 150 °C.

Single Bipolar Transistors Feature Summary

• Complementary pairing with the 2SA965 PNP transistor for audio applications
• High breakdown voltage capability suitable for driver stage amplifiers
• Low output capacitance supporting high-frequency signal processing

Single Bipolar Transistors Applications

• Audio power amplifier circuits
• Driver stage amplifier configurations
• General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as environmental compliance varies by production lot. Confirm the specific hFE classification suffix (O or Y) required for your circuit design, as this determines the minimum DC current gain threshold. Ensure the ordering code matches the exact marking requirements for your assembly line.

Single Bipolar Transistors Selection Notes

Select the 2SC2235 when designing audio power amplifiers requiring a complementary NPN/PNP pair with the 2SA965. Consider the TO-92MOD package constraints for thermal management at 900 mW dissipation. Verify that the 120 V collector-emitter voltage meets the peak voltage requirements of the target application circuit.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's discrete semiconductor transistor lineup designed for general electronics and audio equipment. It utilizes the PCT (Plastic Triple Diffused) process technology to ensure stable performance characteristics across varying operating temperatures and electrical loads.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA965 as the complementary PNP counterpart. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the complementary transistor for the 2SC2235?

The 2SA965 is the designated complementary PNP transistor for use with the 2SC2235.

How does the hFE classification affect the device?

Classification 'O' indicates a DC current gain range of 80 to 160, while 'Y' indicates a range of 120 to 240.

What is the maximum collector power dissipation?

The maximum collector power dissipation is rated at 900 mW at an ambient temperature of 25°C.