2SC2458-Y-AP

Single Bipolar Transistors Overview

The MCC 2SC2458-Y-AP is an NPN plastic-encapsulated transistor designed for general-purpose amplification. It features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 0.15 A. The device has a power dissipation rating of 0.2 W at 25°C, with a thermal resistance from junction to ambient of 625°C/W. The DC current gain (hFE) for the Y rank ranges from 120 to 240 when measured at IC=2mA and VCE=6V. The transition frequency (fT) is specified at 80 MHz under conditions of IC=1.0 mA and VCE=10 Vdc.

Single Bipolar Transistors Feature Summary

• NPN silicon planar structure housed in a TO-92S plastic package
• Low saturation voltage characteristics suitable for switching applications
• High DC current gain stability across operating temperatures
• Lead-free finish compliant with RoHS standards

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Switching applications requiring low saturation voltage
• Audio frequency amplification stages

Single Bipolar Transistors Procurement Notes

Verify authenticity by purchasing directly from Micro Commercial Components or authorized distributors to avoid counterfeit parts. Confirm the specific Y rank classification matches design requirements for hFE range. Ensure the -AP ammo pack packaging aligns with automated assembly needs. Check for halogen-free availability if required by environmental specifications.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a 50 V NPN transistor with moderate current handling capabilities. The Y rank provides a guaranteed minimum hFE of 120, ensuring consistent amplification performance. Consider the 0.2 W power dissipation limit and thermal resistance when designing heat management strategies for enclosed environments.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2458 series of NPN transistors manufactured by Micro Commercial Components. The -Y suffix denotes a specific binning category for DC current gain, distinguishing it from other ranks like GR. The -AP suffix indicates the component is supplied in ammo pack packaging, which is standard for surface-mount or automated through-hole insertion processes.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SC2458-GR for higher gain requirements. Other generic NPN transistors with similar VCEO, IC, and package dimensions may be used if electrical parameters are verified against the datasheet specifications.

Single Bipolar Transistors FAQ

What is the difference between the 2SC2458-Y and 2SC2458-GR?

The primary difference is the DC current gain (hFE) ranking. The Y rank guarantees an hFE range of 120 to 240, while the GR rank offers a higher range of 200 to 400 under the same test conditions.

Is the 2SC2458-Y-AP halogen-free?

Standard units are not explicitly stated as halogen-free. Halogen-free versions are available upon request by adding the '-HF' suffix to the part number.

What is the maximum operating junction temperature?

The maximum operating and storage junction temperature (TJ, Tstg) is +150°C.