Single Bipolar Transistors 2SC2482(T6TOJS,F,M product image

2SC2482(T6TOJS,F,M

  • Description:TRANS NPN 300V 0.1A TO-92MOD
  • Series:-

SKU:1ac353e04104 Category: Brand:

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2SC2482(T6TOJS,F,M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 300V 0.1A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2482(T6TOJS,F,M

  • Description:TRANS NPN 300V 0.1A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 1mA, 10mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 20mA, 10V
  • Power - Max:900 mW
  • Frequency - Transition:50MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2482(T6TOJS,F,M

2SC2482(T6TOJS,F,M

Single Bipolar Transistors Overview

The Toshiba 2SC2482 is a silicon NPN epitaxial planar transistor utilizing the PCT process. It features a collector-emitter voltage of 300 V and a continuous collector current rating of 100 mA. The device exhibits a low collector output capacitance of 3.0 pF and a transition frequency of 50 MHz. It is housed in a JEDEC TO-92MOD plastic package with a maximum junction temperature of 150 °C.

Single Bipolar Transistors Feature Summary

  • High breakdown voltage capability for robust switching performance
  • Low collector output capacitance to support high-frequency operation
  • Epitaxial planar construction for enhanced reliability

Single Bipolar Transistors Applications

  • Color TV horizontal driver circuits
  • Chroma output applications
  • General high-voltage switching

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributor, as legacy components may vary. Confirm that the specific ordering suffix matches the required lead-free finish or marking configuration. Ensure the procurement channel provides valid traceability documentation for quality assurance purposes.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN switch with low parasitic capacitance is required. The 300 V rating suits line-operated applications. Verify that the 100 mA current limit meets the load requirements. Consider the TO-92 package constraints for thermal management and board space availability during the design phase.

Single Bipolar Transistors Part Context

This transistor belongs to Toshiba's general-purpose discrete semiconductor lineup designed for consumer electronics. It serves as a specialized solution for analog and switching tasks within television sets. The component represents a standard offering for horizontal deflection and chroma processing stages in legacy display equipment.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other NPN transistors rated at 300 V C-E voltage and similar capacitance values. Verify pinout compatibility and package dimensions before substitution. Ensure the replacement part meets the same electrical characteristics for saturation voltage and current gain.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The absolute maximum rating for collector-emitter voltage (VCEO) is 300 V.

Is this transistor suitable for audio amplification?

No, it is specifically recommended for color TV horizontal driver and chroma output applications rather than low-noise audio amplification.

What is the typical collector output capacitance?

The typical collector output capacitance (Cob) is 3.0 pF under specified test conditions.

2SC2482(T6TOJS,F,M2SC2482(T6TOJS,F,M

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