2SK4177-DL-E

$3.36

Description：MOSFET N-CH 1500V 2A SMP-FD
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:c62368a97954 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

2SK4177-DL-E is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 1500V 2A SMP-FD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for 2SK4177-DL-E

Description：MOSFET N-CH 1500V 2A SMP-FD
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1500 V
Current - Continuous Drain (Id) @ 25°C：2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：13Ohm @ 1A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：37.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：380 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：80W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SMP-FD
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for 2SK4177-DL-E

2SK4177-DL-E

Single FETs, MOSFETs Overview

The 2SK4177-DL-E is an N-Channel Power MOSFET manufactured by onsemi, housed in a TO-263-2L package. It features a Drain-to-Source Voltage (V_DSS) of 1500 V and a continuous Drain Current (I_D) of 2 A. The device exhibits a typical Static Drain-to-Source On-State Resistance (R_DS(on)) of 10 Ω at V_GS=10V and I_D=1A, with a maximum of 13 Ω. Key electrical parameters include an Input Capacitance (C_iss) of 380 pF, a Gate Charge (Q_g) of 37.5 nC, and a Forward Transfer Admittance (|y_fs|) ranging from 0.7 to 1.4 S. The component supports a maximum allowable power dissipation of 80 W at Tc=25°C.

Single FETs, MOSFETs Feature Summary

High voltage capability with a 1500 V Drain-to-Source breakdown rating suitable for demanding power applications.
Optimized gate drive characteristics featuring a 10V drive requirement and low total gate charge for efficient switching.
Robust thermal performance allowing up to 80 W power dissipation at case temperature of 25°C.

Single FETs, MOSFETs Applications

High-voltage power supply circuits
Industrial motor control systems
Switching regulators

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation, as variations such as DL-1E indicate tape-and-reel packaging configurations. Confirm RoHS compliance status through current datasheets or manufacturer notices. Ensure the procurement channel provides valid traceability for this discontinued or limited-stock component type. Cross-reference the part number with the latest onsemi catalog to confirm availability and any potential obsolescence warnings before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage isolation and moderate current handling capabilities. The 1500 V rating makes it appropriate for primary-side switching in offline converters. Consider the relatively high R_DS(on) compared to lower voltage devices; ensure adequate heatsinking or derating strategies are implemented to manage power dissipation within the specified junction temperature limits during continuous operation.

Single FETs, MOSFETs Part Context

This device belongs to the 2SK4177 series of N-Channel Power MOSFETs produced by onsemi. It utilizes silicon technology and is packaged in the TO-263-2L form factor, also known as SC-83 or TO-263 per JEITA/JEDEC standards. The product line is designed for general-purpose high-voltage switching applications, offering a balance between voltage withstand capability and switching speed.