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2STC2510 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is TRANS NPN 100V 25A TO-3P. Review the specifications below when checking this part for your BOM.
The STC2510 is a high-power NPN epitaxial planar bipolar transistor manufactured using BiT-LA technology. It features a collector-emitter voltage of 100 V and a continuous collector current rating of 25 A, with a peak current capability of 50 A for pulses under 5 ms. The device provides a total dissipation of 125 W at 25 °C case temperature and operates up to a junction temperature of 150 °C. It includes an open-drain pin output for load disconnection diagnostics and supports PWM dimming. The typical transition frequency is 20 MHz.
Verify the exact part number against official documentation, as the provided datasheet references the 2STC2510 while the query specifies 2STC2510. Confirm package type and marking codes match the TO-3P tube packaging described in the source material. Ensure compliance with environmental standards such as ECOPACK lead-free specifications when sourcing components.
Select this component for applications requiring high current handling and robust thermal performance. The 125 W dissipation rating and low thermal resistance make it suitable for power amplifier designs. Consider the complementary 2STA2510 for push-pull configurations. Verify that the operating conditions remain within the absolute maximum ratings to ensure reliability.
This NPN transistor belongs to STMicroelectronics' high-power discrete semiconductor portfolio. It utilizes BiT-LA technology optimized for linear amplifier applications. The device is designed to replace discrete solutions with integrated precision and reliability. It serves as a key component in power management and signal amplification circuits.
The 2STA2510 is documented as the complementary PNP counterpart. No other direct substitutes are listed in the verified source material.
The continuous collector current (IC) is rated at 25 A.
Yes, the electrical characteristics are fully characterized at 125 °C.
It is manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.
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