7133LA45J8

Overview

The Renesas Electronics Corporation 7133LA45J8 is a dual-port, asynchronous static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 32 kilobits organized as 2K words by 16 bits. The device features a parallel interface with a maximum access time of 45 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and supports surface-mount installation in a 68-PLCC package measuring 24.21x24.21 mm. The component is rated for an operating temperature range of 0°C to 70°C.

Feature Summary

• Dual-port architecture enabling independent simultaneous access from two separate processors or systems.

Applications

• High-speed data buffering in communication systems
• Cache memory implementation in embedded controllers
• Data logging applications requiring rapid write cycles

Procurement Notes

Verify the specific suffix J8 against official Renesas documentation to confirm package dimensions and lead form. Confirm RoHS compliance status as legacy variants may differ. Check for End-of-Life notices or production discontinuance announcements prior to procurement planning.

Selection Notes

Select this component when dual-port functionality is required for concurrent read/write operations. Ensure the system design accommodates the 68-pin PLCC footprint and 4.5V to 5.5V power requirements. Validate that the 45 ns access speed meets the timing constraints of the target application bus.

Part Context

This part belongs to the 7133SA/LA series of high-speed CMOS dual-port SRAMs manufactured by Renesas Electronics. The series offers various speed grades and package options to support diverse industrial and commercial memory applications requiring reliable asynchronous data handling.

Replacement Considerations

Consult official datasheets for cross-reference compatibility. Verify pinout alignment and electrical specifications before substituting with other dual-port SRAM models.