7134LA25J

Overview

The Renesas Electronics Corporation 7134LA25J is a dual-port static random access memory (SRAM) integrated circuit. It provides a total storage capacity of 32 kbit, organized as 4K words by 8 bits. The device features asynchronous parallel interface operation with a maximum access time of 25 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and supports surface-mount installation in a 52-pin PLCC package.

Feature Summary

• Dual-port architecture enabling independent simultaneous access from two separate ports.

Applications

• High-speed data buffering in communication systems
• Cache memory implementation in embedded processors
• FIFO buffer applications in digital signal processing

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to obsolete status. Confirm RoHS compliance requirements against specific project standards, as legacy variants may differ. Validate pin compatibility and electrical specifications against current system designs before procurement.

Selection Notes

Select this component for applications requiring independent dual-port memory access without arbitration overhead. Ensure the design accommodates the 52-PLCC package footprint and 4.5V to 5.5V power supply constraints. Consider the 25 ns access speed suitability for target clock frequencies.

Part Context

This part belongs to the Renesas 7134LA series of dual-port SRAMs. It is an obsolete product line previously manufactured under IDT branding. The device serves as a high-performance memory solution for legacy industrial and telecommunications equipment designs requiring reliable dual-port functionality.

Replacement Considerations

IDT7134LA25JGI