7134SA20J

Overview

The Renesas Electronics Corporation 7134SA20J is an asynchronous dual-port static random access memory (SRAM) device. It provides a storage capacity of 32 kbit, organized as 4k words by 8 bits. The component features a parallel interface with a maximum access time of 70 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and supports surface mount installation in a PLCC-52 package.

Feature Summary

• Dual-port architecture enabling independent simultaneous access from two separate ports.

Applications

• Data buffering in high-speed digital systems
• Cache memory implementation in embedded processors
• FIFO buffer applications requiring concurrent read/write operations

Procurement Notes

Verify the specific suffix J against official datasheets to confirm lead-free status and RoHS compliance details. Confirm the package type matches the design requirements. Check for end-of-life notifications or product discontinuance notices prior to finalizing procurement plans.

Selection Notes

Select this component when a small-capacity, high-reliability dual-port SRAM is required for parallel interfaces. Ensure the system voltage aligns with the 4.5V to 5.5V operating range. Consider the PLCC-52 footprint constraints during PCB layout planning.

Part Context

This part belongs to the IDT 7134 series of dual-port SRAMs manufactured by Renesas Electronics. The series offers various speed grades and packaging options to suit different performance and form factor requirements in industrial and commercial electronics.

Replacement Considerations

IDT7134SA20J is listed as an alias for this component. Verify pinout and electrical specifications before substituting with other dual-port SRAM families.