7142SA35J8

Overview

The Renesas Electronics Corporation 7142SA35J8 is a static random access memory (SRAM) component featuring dual-port asynchronous technology. It provides a storage capacity of 16 kbit, organized as 2K x 8 bits. The device supports parallel interface communication with an access time of 35 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and functions at temperatures between 0°C and +70°C. The integrated circuit is housed in a 52-PLCC surface-mount package.

Feature Summary

• Dual-port architecture enabling simultaneous independent access to memory cells by two separate processors or systems without external arbitration logic.
• Asynchronous operation allowing flexible timing integration into various digital systems without requiring a synchronized clock signal.
• TTL-compatible input levels simplifying interfacing with standard logic families while maintaining single 5V power supply compatibility.

Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in industrial control systems
• Data storage in embedded network appliances

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as the part may not meet current environmental standards. Validate pinout compatibility with existing PCB layouts before procurement. Check for moisture sensitivity handling requirements during storage and assembly processes.

Selection Notes

Consider the 35 ns access speed when evaluating system timing constraints. Ensure the 52-PLCC package fits available board space and soldering capabilities. Verify that the 4.5V to 5.5V operating range matches the target system power supply. Assess whether dual-port functionality is necessary compared to simpler single-port alternatives.

Part Context

This component belongs to the 7142SA series of dual-port SRAMs manufactured by Renesas Electronics. The series offers various speed grades and packaging options for different application needs. These devices are designed for high-performance memory applications requiring concurrent read/write operations from multiple masters.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate compatible dual-port SRAMs with similar 16Kb capacity and 52-PLCC packaging. Verify electrical specifications match original requirements before substitution.