7164L100DB

7164L100DB

  • Description:IC SRAM 64KBIT PARALLEL 28CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:42268ddc4cb4 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 64KBIT PARALLEL 28CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:64Kbit
  • Memory Organization:8K x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:100ns
  • Voltage - Supply:4.5V ~ 5.5V
  • Operating Temperature:-55°C ~ 125°C (TA)
  • Mounting Type:Through Hole
  • Package / Case:28-CDIP (0.600", 15.24mm)
  • Supplier Device Package:28-CDIP
  • Access Time:100 ns

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7164L100DB

Overview

The 7164L100DB is a CMOS Static RAM component manufactured by Renesas Electronics Corporation. It features an 8K x 8-bit memory organization, providing 64 kilobits of volatile storage capacity. The device operates with a supply voltage range of 5.0V and supports asynchronous data access. Key electrical characteristics include a reduced power standby mode for energy efficiency. The component is designed for general-purpose data storage applications requiring reliable non-volatile-like performance in volatile systems.

Feature Summary

  • Asynchronous SRAM technology for flexible data access
  • Reduced power standby mode for energy conservation
  • CMOS construction for reliability and efficiency

Applications

  • General-purpose data buffering
  • Embedded system memory expansion
  • Industrial control data storage

Procurement Notes

Verify the current product status as sources indicate this part may be obsolete. Confirm availability through authorized distributors or secondary market suppliers. Ensure compatibility with existing 5V logic levels and interface requirements before procurement. Check for alternative replacement parts if new production units are required for long-term projects.

Selection Notes

Select this component for applications requiring simple asynchronous SRAM with 5V operation. Consider the 8K x 8 organization size for moderate data storage needs. Evaluate the reduced standby power feature if power consumption during idle states is a critical design parameter. Ensure the system architecture supports the specific pinout and timing requirements of this asynchronous interface.

Part Context

This component belongs to the broader category of static random-access memory (SRAM) devices used in embedded electronics. It serves as a high-speed temporary storage solution within microcontroller-based systems. The 7164 series typically offers a balance between speed and power consumption, suitable for various industrial and consumer electronic applications where volatile memory is needed.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the potentially obsolete status, verify equivalent asynchronous SRAM components with matching 8Kx8 organization and 5V supply voltage from other manufacturers.

7164L100DB7164L100DB

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