7164L20TDB

7164L20TDB

$21.85
  • Description:IC SRAM 64KBIT PARALLEL 28CDIP
  • Series:-
  • Mfr:IDT, Integrated Device Technology Inc
  • Package:Bulk

SKU:09db65b7ff54 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 64KBIT PARALLEL 28CDIP
  • Series:-
  • Mfr:IDT, Integrated Device Technology Inc
  • Package:Bulk
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:64Kbit
  • Memory Organization:8K x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:20ns
  • Voltage - Supply:4.5V ~ 5.5V
  • Operating Temperature:-55°C ~ 125°C (TA)
  • Mounting Type:Through Hole
  • Package / Case:28-CDIP (0.300", 7.62mm)
  • Supplier Device Package:28-CDIP
  • Access Time:20 ns

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7164L20TDB

Overview

The IDT7164L20TDB is a high-speed static RAM IC fabricated using CMOS technology. It provides a memory density of 65,536 bits organized as 8K words by 8 bits. The device features a parallel interface with a maximum access time of 20 ns. It operates within a supply voltage range of 4.5V to 5.5V and supports an operating temperature range from -55°C to 125°C. The component is housed in a 28-pin ceramic dual in-line package (CDIP).

Feature Summary

  • High-reliability CMOS fabrication for robust performance.
  • Asynchronous operation allowing flexible system integration.
  • Single 5V power supply compatibility.

Applications

  • Industrial control systems requiring wide temperature tolerance.
  • Military-grade electronic equipment.
  • High-speed data buffering applications.

Procurement Notes

Verify the specific suffix 'TDB' indicates the ceramic DIP package and military temperature grade against the manufacturer's official datasheet. Confirm RoHS compliance status as historical IDT documents may list non-compliance for certain variants. Ensure the supplier provides traceable documentation matching the exact part number to avoid substitution errors with plastic or commercial grade equivalents.

Selection Notes

Select this component when a single-port asynchronous SRAM with military-grade thermal stability is required. The 20 ns speed suits moderate-to-high frequency logic interfaces. Compare against the L25 variant if slower speeds allow for cost reduction, or the L30 variant for different timing constraints. Ensure the PCB layout accommodates the 28-CDIP footprint and that the system power supply remains stable within the 4.5V to 5.5V window.

Part Context

This part belongs to the IDT7164 family of 64Kb static random-access memories. The family includes various speed grades and packaging options, such as plastic DIP and ceramic DIP. The 'L' series typically denotes low-power or specific process variations compared to standard versions. This specific model represents the 20 ns speed bin in a hermetic ceramic package suitable for harsh environments.

Replacement Considerations

Direct substitutes include other IDT7164 variants with compatible pinouts, such as IDT7164L25TDB or IDT7164L30TDB, provided the slower access times are acceptable. Cross-manufacturer replacements require verifying voltage levels, pin configurations, and electrical characteristics against the original datasheet specifications.

7164L20TDB7164L20TDB
$21.85
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