7164L35DB

Overview

The Renesas Electronics Corporation 7164L35DB is a static random-access memory (SRAM) integrated circuit belonging to the 7164S/L series. It provides a storage capacity of 64 kilobits, organized as 8K words by 8 bits. The device utilizes asynchronous parallel interface technology with a specified access time of 35 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and is housed in a 28-pin Ceramic Dual In-Line Package (CDIP).

Feature Summary

• Asynchronous SRAM architecture for standard parallel data interfacing.
• High-density 64Kb memory organization supporting 8-bit word width.
• Robust ceramic packaging designed for reliable operation.

Applications

• Industrial control systems requiring non-volatile-like retention during power cycles.
• Embedded computing applications utilizing legacy parallel bus architectures.
• Automotive electronics environments demanding high thermal stability.

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm package integrity upon receipt, as ceramic packages are susceptible to mechanical damage. Ensure compatibility with existing system voltage levels before integration into new designs.

Selection Notes

Select this component when a 35ns access speed meets system timing requirements. Consider the CDIP package for through-hole mounting needs. Evaluate total cost of ownership given the discontinued status and potential availability constraints in the secondary market.

Part Context

This part belongs to the IDT 7164 family, widely used in legacy industrial and automotive applications. It represents a mature technology node offering stable performance characteristics for established hardware platforms that have not transitioned to newer memory interfaces.

Replacement Considerations

Consult official documentation for direct pin-compatible substitutes within the same series. Verify electrical specifications match exactly before substituting with other manufacturers' equivalents.