7164L70TDB

Overview

The IDT7164L70TDB is a high-speed static RAM organized as 8K x 8 bits, utilizing CMOS technology. It features a maximum access time of 70 ns and operates within a standard 5 V supply voltage range. The device includes a low-power standby mode activated by specific control signals and supports battery backup data retention at voltages as low as 2 V. It is housed in a 28-pin plastic SOJ package with TTL-compatible inputs and outputs.

Feature Summary

• Low-power standby mode for reduced energy consumption
• Battery backup capability for data retention
• TTL-compatible logic levels

Applications

• High-speed memory buffering
• Cache memory systems
• Data storage applications

Procurement Notes

Verify the manufacturer's current production status and lifecycle stage before procurement. Confirm that the plastic SOJ package variant meets your board layout requirements. Ensure compliance with relevant environmental directives regarding lead content if applicable to your deployment region.

Selection Notes

Select this component when an 8K x 8 SRAM configuration with 70 ns speed is required. Consider the low-power standby feature for power-sensitive designs. Verify that the 28-pin SOJ package fits your assembly constraints compared to DIP alternatives.

Part Context

This part belongs to the IDT7164 series of 64K-bit (8K x 8) static RAMs. The 'L' suffix indicates the low-power version with battery backup support, while '70' denotes the 70 ns access speed. The 'TDB' suffix specifies the 28-pin plastic small outline J-leaded package.

Replacement Considerations

Check for direct pin-to-pin replacements within the same IDT7164 family offering different speeds or packages. Evaluate other manufacturers' 8K x 8 SRAMs with similar 70 ns access times and 28-pin SOJ footprints.