7164S25DB

Overview

The Renesas Electronics Corporation 7164S25DB is a 64Kbit (8K x 8) asynchronous static random-access memory (SRAM) integrated circuit. It operates within a supply voltage range of 4.5V to 5.5V and features a maximum access time of 25ns. The component is housed in a 28-pin ceramic dual in-line package (CDIP). Designed for commercial applications, it supports a standard operating temperature range from 0°C to +70°C.

Feature Summary

• Asynchronous parallel interface architecture requiring no clock signals or refresh cycles
• Low-power standby mode capability for system-level power reduction
• TTL-compatible input and output logic levels

Applications

• Industrial control systems
• Telecommunications equipment
• Embedded data storage modules

Procurement Notes

Verify the specific suffix 'DB' against official manufacturer documentation to confirm the CDIP package type and lead-free status. Confirm end-of-life status with authorized distributors prior to procurement planning. Ensure compatibility with existing board layouts regarding pin pitch and thermal requirements.

Selection Notes

Select this component when a 25ns access speed and 64Kbit capacity are required in a through-hole ceramic package. Compare against other suffixes such as 'YG' for SOJ packages if surface mount technology is preferred. Verify that the 4.5V to 5.5V voltage range aligns with the target system's power supply specifications.

Part Context

This part belongs to the 7164S series of high-speed CMOS SRAMs manufactured by Renesas Electronics. The series provides various speed grades and packaging options to support diverse embedded memory needs in industrial and commercial electronic designs.

Replacement Considerations

Publicly confirmed substitute part numbers were not identified in the provided source material.