71T75602S100BGGI

71T75602S100BGGI

  • Description:IC SRAM 18MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:e273f788d604 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 18MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:18Mbit
  • Memory Organization:512K x 36
  • Memory Interface:Parallel
  • Clock Frequency:100 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:5 ns
  • Grade:-
  • Qualification:-

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71T75602S100BGGI

Overview

The Renesas 71T75602S100BGGI is a synchronous static random-access memory (SRAM) integrated circuit utilizing Zero Bus Turnaround (ZBT) technology. It provides an 18Mb storage capacity organized as 512K words by 36 bits. The device operates with a maximum clock frequency of 100 MHz and features a typical access time of 5 ns. It requires a supply voltage range of 2.375V to 2.625V and supports parallel data interfaces. The component is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm, designed for surface-mount installation.

Feature Summary

  • Implements Zero Bus Turnaround (ZBT) technology to enhance data throughput efficiency on the parallel interface.
  • Supports single data rate (SDR) operations synchronized with the system clock for predictable timing.
  • Utilizes a 2.5V core voltage architecture to optimize power consumption relative to performance.

Applications

  • High-speed digital signal processing systems requiring low-latency data buffering
  • Network infrastructure equipment needing rapid packet storage and retrieval
  • Industrial control systems demanding reliable volatile memory within specified temperature ranges

Procurement Notes

This component has reached end-of-life status, with official discontinuation notices recorded. Verification of current availability should focus on surplus distributors or secondary market sources rather than direct manufacturer allocation. Buyers must confirm lot dates and authenticity carefully due to the obsolescence status. Ensure that any replacement sourcing aligns with long-term maintenance requirements for existing hardware deployments.

Selection Notes

Engineers selecting this part should verify compatibility with 2.5V logic levels and 100 MHz clock domains. The 36-bit word width necessitates specific bus width matching in the host design. Consider the physical dimensions of the 119-PBGA package during PCB layout planning. Evaluate thermal dissipation capabilities within the -40°C to 85°C operating range to ensure stable performance under load conditions.

Part Context

The 71T75602 series represents Renesas' high-performance ZBT SRAM family, bridging the gap between standard synchronous SRAM and faster pipelined alternatives. This specific model belongs to the 100 MHz speed grade variant within the broader 71T75602 product line. It shares architectural similarities with other members like the 71T75602S133 but offers lower latency characteristics suited for mid-range high-speed applications.

Replacement Considerations

Direct pin-to-pin replacements may include the 71T75602S133BGI for higher speed requirements, though electrical parameters differ. Verify if the 71V65603 series serves as a functional alternative, noting its 3.3V operation and pipelined architecture require significant design adjustments. Consult official substitution guides for confirmed compatible parts.

71T75602S100BGGI71T75602S100BGGI

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