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71T75602S150PFGI8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 18MBIT PARALLEL 100TQFP. Review the specifications below when checking this part for your BOM.
The Renesas Electronics Corporation 71T75602S150PFGI8 is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit. It provides an 18 Mbit storage capacity organized as 512K x 36 bits. The device operates with a maximum clock frequency of 150 MHz and features a typical access time of 3.8 ns. It utilizes a parallel interface and requires a supply voltage range of 2.375V to 2.625V. The component is housed in a 100-TQFP (14x14) surface-mount package and supports an industrial operating temperature range from -40°C to +85°C.
Verify the specific suffix PFGI8 against official Renesas documentation to confirm the exact package type, lead finish, and temperature grade. Confirm current availability status as this series may be subject to discontinuation notices. Ensure compatibility with existing board layouts regarding the 100-TQFP footprint and pinout configuration before procurement.
Select this component when a 36-bit wide data interface is required for system synchronization. Compare performance metrics against other members of the 71T75602 family to determine if different speed grades or packaging options better suit the thermal and spatial constraints of the design application.
This part belongs to the Renesas 71T75602 family of synchronous SRAM devices. The family offers various speed grades and packaging configurations to support diverse memory requirements. The 71T75602S150 variant specifically targets applications needing 150 MHz operation speeds while maintaining the 18 Mbit density structure common across the series.
Consult official Renesas cross-reference guides for verified substitutes. Potential alternatives include other speed grades within the 71T75602 series such as the 71T75602S133 or 71T75602S200, provided pinouts and electrical characteristics remain compatible with the existing design.
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