71T75802S100BG8

71T75802S100BG8

  • Description:IC SRAM 18MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:4f59cd8b0d48 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 18MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:18Mbit
  • Memory Organization:1M x 18
  • Memory Interface:Parallel
  • Clock Frequency:100 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:5 ns
  • Grade:-
  • Qualification:-

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71T75802S100BG8

Overview

The Renesas Electronics Corporation 71T75802S100BG8 is an 18 Mbit synchronous static random-access memory (SRAM) integrated circuit. It utilizes Zero Bus Turnaround (ZBT) technology to optimize data throughput. The device features a parallel interface with a maximum clock frequency of 100 MHz and a typical access time of 6 ns. It operates within a supply voltage range of 2.375 V to 2.625 V. The memory organization is configured as 1M x 18 bits. The component is housed in a 119-pin Plastic Ball Grid Array (PBGA) package, measuring 14x22 mm, designed for surface-mount installation.

Feature Summary

  • Implements Zero Bus Turnaround (ZBT) architecture to eliminate wait states during bidirectional data transfers.
  • Provides high-performance parallel data access synchronized with the system clock.
  • Supports standard 2.5V core voltage operation for compatibility with common logic families.

Applications

  • High-speed digital signal processing systems requiring low-latency buffering
  • Network infrastructure equipment such as routers and switches
  • Industrial control systems demanding reliable volatile data storage

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as older batches may not meet current environmental standards. Validate package integrity upon receipt, as BGA components are sensitive to moisture and physical damage. Ensure design-in documentation matches the specific suffix BG8 for pinout and thermal characteristics.

Selection Notes

Select this component when a 100 MHz synchronous SRAM with ZBT capabilities is required in a PBGA form factor. Compare against higher-speed variants like the S166 or S200 series if faster access times are needed. Consider the 1M x 18 organization width for error correction code implementations. Evaluate thermal dissipation needs for the 119-ball BGA package in enclosed enclosures.

Part Context

This part belongs to the IDT 71T75802 family of synchronous ZBT SRAMs manufactured by Renesas Electronics. The family offers various speed grades and package options, including TQFP and PBGA configurations. The 71T75802 series is designed for applications requiring high bandwidth and low power consumption in embedded memory systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Due to the discontinued status, direct pin-to-pin replacements from other manufacturers require independent verification of electrical parameters and pin assignments.

71T75802S100BG871T75802S100BG8

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