71V016SA12BFG8

Memory IC Overview

The IDT71V016SA12BFG8 is a high-speed Static RAM fabricated using CMOS technology. It provides a memory density of 1,048,576 bits, organized as 64K words by 16 bits. The device features an asynchronous parallel interface with a maximum access time of 12 ns. It operates within a supply voltage range of 3.0 V to 3.6 V and utilizes a 48-pin CABGA package.

Memory IC Feature Summary

• High-performance CMOS fabrication for reliability
• Asynchronous parallel data interface
• Single power supply operation

Memory IC Applications

• General-purpose memory storage in embedded systems
• Data buffering in digital signal processing circuits
• Cache memory in microprocessor-based designs

Memory IC Procurement Notes

Verify the specific suffix 'BFG8' against official Renesas or IDT documentation to confirm the 48-pin CABGA package and reel packaging configuration. Ensure compliance with current RoHS directives and lead-free status requirements for your assembly process. Cross-reference the manufacturer's latest product discontinuance notices to confirm active production status.

Memory IC Selection Notes

Select this component when a 1 Mbit SRAM with 12 ns speed is required in a compact surface-mount package. Compare pin compatibility and electrical characteristics with other members of the 71V016 family if alternative packages are needed. Verify that the 3.3 V logic levels match the system voltage domain.

Memory IC Part Context

This part belongs to the IDT71V016 series of 1-Megabit (64K x 16) static random-access memories. The series offers various access times and package options to suit different performance and form-factor constraints in consumer and industrial electronics.

Memory IC Replacement Considerations

Check for direct substitutes within the 71V016SA12BFGI8 variant or other 48-pin FBGA/CABGA SRAMs from IDT/Renesas with identical 12 ns timing.