71V016SA15YG8

Overview

The 71V016SA15YG8 is a 1 Mbit (64K x 16) asynchronous static random-access memory manufactured by Renesas Electronics. It operates within a supply voltage range of 3 V to 3.6 V and features a maximum access time of 15 ns. The device utilizes a parallel interface and is housed in a 44-lead Small Outline J-Lead (SOJ) surface-mount package. It supports single data rate operation and functions within an ambient temperature range of 0°C to +70°C.

Feature Summary

• Asynchronous parallel SRAM architecture for direct interfacing
• Single data rate operation with 15 ns access speed
• Surface-mount SOJ packaging for board integration

Applications

• Embedded system memory storage
• Industrial control unit data buffering
• Consumer electronics temporary data retention

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance and moisture sensitivity level handling requirements during assembly. Check for valid datasheet revisions and ensure the specific suffix matches design specifications before procurement.

Selection Notes

Select this part for designs requiring 64K x 16 word organization with 15 ns latency. Ensure the PCB layout accommodates the 44-SOJ footprint. Verify that the system power supply remains stable between 3 V and 3.6 V to maintain operational integrity under industrial temperature conditions.

Part Context

This component belongs to the 71V016SA series of high-speed asynchronous SRAMs. It serves as a legacy memory solution from Renesas, previously known under IDT branding. The device provides non-volatile-like speed for volatile storage applications in standard commercial temperature ranges.

Replacement Considerations

IDT71V016SA15YG8 is a confirmed equivalent part number representing the same device prior to brand consolidation.