71V016SA20BFG8

Memory IC Overview

The IDT 71V016SA20BFG8 is a high-speed Static RAM organized as 64K x 16, providing a total memory density of 1 Mbit. It features an asynchronous parallel interface with a maximum access time of 20 ns. The device operates within a voltage range of 3.0 V to 3.6 V and supports a maximum supply current of 120 mA. It is housed in a 48-CABGA (7x7) package and is designed for industrial temperature ranges from -40°C to +85°C.

Memory IC Feature Summary

• High-speed asynchronous SRAM architecture
• Parallel data interface configuration
• Industrial grade thermal stability

Memory IC Applications

• Embedded system memory storage
• Data buffering in processing units
• Cache memory implementation

Memory IC Procurement Notes

Verify component authenticity through authorized channels due to discontinuation status. Confirm RoHS compliance and lead-free soldering requirements. Check for moisture sensitivity handling protocols during storage and assembly. Validate package integrity against the specified 48-CABGA form factor before integration into manufacturing workflows.

Memory IC Selection Notes

Select this component for applications requiring fast asynchronous access times and compact surface-mount packaging. Ensure voltage levels match the 3.0 V to 3.6 V operational range. Consider the 48-CABGA footprint for PCB layout compatibility. Evaluate power consumption limits against the 120 mA maximum specification for thermal management planning.

Memory IC Part Context

This part belongs to the IDT 71V016 series of high-performance SRAMs. It utilizes advanced fabrication techniques for reliability. The series is known for low power consumption and high speed. It serves as a standard solution for general-purpose memory needs in electronic designs.

Memory IC Replacement Considerations

Consult official product discontinuance notices for confirmed substitute part numbers. Verify pin-to-pin compatibility and electrical parameter equivalence before substitution.