71V016SA20YGI

71V016SA20YGI

$2.28
  • Description:IC SRAM 1MBIT PARALLEL 44SOJ
  • Series:-
  • Mfr:IDT, Integrated Device Technology Inc
  • Package:Bulk

SKU:74ea3c90c6b9 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 1MBIT PARALLEL 44SOJ
  • Series:-
  • Mfr:IDT, Integrated Device Technology Inc
  • Package:Bulk
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:1Mbit
  • Memory Organization:64K x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:20ns
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package:44-SOJ
  • Access Time:20 ns

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71V016SA20YGI

Overview

The IDT71V016SA20YGI is a standard asynchronous static random-access memory (SRAM) integrated circuit manufactured by Integrated Device Technology, now part of Renesas Electronics Corporation. It provides a total storage capacity of 1 Megabit, organized as 64K words by 16 bits. The device features a parallel interface with a maximum access time of 20 nanoseconds. It operates on a single 3-volt to 3.6-volt power supply and utilizes CMOS technology. The component is housed in a 44-lead Bipolar Small Outline Junction (SOJ) package, specifically identified as a 44-BSOJ with a width of 0.400 inches.

Feature Summary

  • Asynchronous operation mode for flexible system integration
  • Parallel data interface architecture
  • CMOS technology construction

Applications

  • General-purpose volatile memory storage
  • Buffering applications in digital systems
  • Cache memory implementations

Procurement Notes

This specific part number has been officially discontinued and is no longer in active manufacturing. Verification of current availability requires checking for end-of-life status or last-time-buy deadlines. Procurement should focus on identifying qualified replacement components from the manufacturer's successor list or alternative suppliers offering pin-compatible equivalents. Ensure any substitute meets the original electrical specifications and package dimensions.

Selection Notes

Designers requiring this component must account for its discontinued status. Selection criteria should prioritize finding a direct functional equivalent with matching 64Kx16 organization, 20ns access speed, and 3.3V operation. Compatibility checks must verify the 44-pin SOJ footprint and voltage levels. Alternative packages such as TSOP may require adapter solutions if exact pin-out compatibility is not maintained by the substitute part.

Part Context

The IDT71V016SA20YGI belongs to the broader 71V016 family of high-speed SRAMs produced by IDT. This family was widely used in embedded systems before being phased out. The product line transitioned to Renesas Electronics following corporate acquisitions. Similar devices in the series include variants with different access speeds or packaging options, but all share the fundamental 1Mb density architecture.

Replacement Considerations

Alliance Memory Inc. AS7C31026B-12JIN is listed as a similar replacement option.

71V016SA20YGI71V016SA20YGI
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