71V124SA12TYG

Overview

The Renesas Electronics Corporation 71V124SA12TYG is a 1 Mbit (128K x 8) asynchronous static random-access memory (SRAM) device. It operates on a single 3.3V supply with a voltage range of 3.0V to 3.6V. The component features a 12 ns access time and utilizes a parallel interface. It is housed in a 32-pin SOJ package designed for surface mount technology. The device supports an operating temperature range from 0°C to +70°C.

Feature Summary

• Utilizes JEDEC center power and ground pinout architecture to reduce noise generation and improve system performance.
• Employs fully static asynchronous circuitry that requires no clocks or refresh cycles for operation.
• Features bidirectional inputs and outputs compatible with LVTTL logic levels.

Applications

• General-purpose data storage in embedded systems
• Buffer memory for microcontroller applications
• Cache memory in industrial control equipment

Procurement Notes

Verify the specific suffix TYG against official datasheets to confirm the exact package type and moisture sensitivity level. Confirm RoHS compliance status through current manufacturer documentation. Check for product change notifications regarding lead-free specifications before procurement.

Selection Notes

Select this component when a 12 ns access speed is required for 3.3V asynchronous SRAM applications. Ensure the design accommodates the 32-pin SOJ footprint. Verify that the system environment remains within the specified commercial temperature limits of 0°C to +70°C.

Part Context

This part belongs to the 71V124SA series of 3.3V CMOS SRAMs. The series is characterized by its organization as 128K x 8 bits. It is designed for low power consumption via chip deselect functionality. The family supports various packages including plastic SOJ and TSOP types.

Replacement Considerations

Public confirmed substitute: 71V124SA12TYGI.