71V321L25JI8

Overview

The Renesas Electronics Corporation 71V321L25JI8 is a static random-access memory (SRAM) device featuring a 16 kbit storage capacity organized as 2K x 8. It operates with an asynchronous parallel interface and supports a supply voltage range of 3 V to 3.6 V. The component provides a maximum access time of 25 ns and has a maximum power supply current of 130 mA. It is designed for operation within an industrial temperature range of -40°C to +85°C. The device is housed in a 52-pin PLCC package.

Feature Summary

• Dual-port architecture enabling independent simultaneous access by two masters
• Asynchronous operation without clock dependency
• Single 3.3 V power supply compatibility

Applications

• Data buffering in embedded systems
• Cache memory implementation
• Telecommunications equipment

Procurement Notes

Verify RoHS compliance status, as some sources indicate non-compliance while others suggest specific suffix variations may differ. Confirm the exact package type and pinout against the official datasheet before integration. Check for obsolete status or lifecycle notices from the manufacturer to ensure long-term availability and support.

Selection Notes

Select this component when dual-port functionality is required for concurrent data handling. Ensure the design accommodates the 52-lead PLCC footprint and meets the 3.3 V logic level requirements. Verify that the 25 ns access speed aligns with system timing constraints and that the operating temperature range suits the deployment environment.

Part Context

This part belongs to the 71V321L series of asynchronous dual-port SRAMs manufactured by Renesas Electronics. The series is characterized by high-speed performance and low power consumption, suitable for applications requiring independent read/write ports. The 'J' suffix typically denotes the plastic leaded chip carrier package variant.

Replacement Considerations

Check for direct substitutes such as the IDT71V321L25JI8, which shares identical specifications. Verify pin compatibility and electrical parameters before substitution.