71V3556SA100BQG8

Overview

The 71V3556SA100BQG8 is a synchronous single data rate zero bus turnaround SRAM manufactured by Renesas Electronics Corporation. It features a storage capacity of 4.5 Mbit organized as 128K x 36. The device operates with a maximum clock frequency of 100 MHz and an access time of 5 ns. It utilizes a parallel interface and requires a supply voltage between 3.135 V and 3.465 V. The component is housed in a 165-CABGA package measuring 13x15 mm, designed for surface mount installation.

Feature Summary

• Synchronous SDR architecture with zero bus turnaround capability to eliminate dead cycles during read-write transitions.
• High-speed parallel interface supporting 100 MHz operation with 5 ns access latency.
• Integrated pipelined output structure optimized for high-performance memory applications.

Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in network routers and switches
• Data acquisition systems requiring fast random access

Procurement Notes

Verify the specific suffix BQG8 against official Renesas documentation to confirm pinout and electrical characteristics. Confirm RoHS compliance status as some variants are non-compliant. Check current production status as this series has been subject to end-of-life notifications. Ensure compatibility with existing PCB footprints for the 165-CABGA package before procurement.

Selection Notes

Select this component when a 36-bit wide synchronous SRAM is required for high-throughput data paths. The 100 MHz speed grade offers a balance between performance and power consumption compared to faster variants. Verify that the system design supports the 3.3V I/O levels and the specific thermal requirements of the CABGA package for the intended operating environment.

Part Context

This part belongs to the 71V3556 family of synchronous ZBT SRAMs from Renesas. The family includes various speed grades and package options such as PBGA and TBGA. The SA suffix typically denotes specific speed binning or testing parameters within the broader product line. These devices are commonly used in embedded systems requiring reliable, fast volatile memory storage.

Replacement Considerations

Direct substitutes include other 71V3556 variants with compatible packages like 71V3556SA100BQI8 or 71V3556SA100BG8. Cross-vendor equivalents must be verified for pin compatibility and electrical specifications. Ensure any replacement maintains the 128K x 36 organization and synchronous interface timing.