71V3557S80PFG

71V3557S80PFG

$6.62
  • Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:c8aa4de16469 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:100-LQFP
  • Supplier Device Package:100-TQFP (14x14)
  • Access Time:8 ns

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71V3557S80PFG

Overview

The IDT71V3557S80PF is a synchronous single data rate zero bus turnaround SRAM manufactured by Renesas Electronics Corporation. It features a memory organization of 128K x 36, providing a total capacity of 4.5 Mbit. The device utilizes a parallel interface with an access time of 8 ns and operates within a supply voltage range of 3.135 V to 3.465 V. It is housed in a 100-TQFP package measuring 14x14 mm and supports surface mount installation. The component is designed for industrial temperature ranges from 0°C to 70°C.

Feature Summary

  • Supports synchronous single data rate operation with zero bus turnaround architecture
  • Provides high-speed parallel data transfer capabilities
  • Features a compact 100-pin thin quad flatpack surface-mount package

Applications

  • High-performance embedded systems requiring fast memory access
  • Network infrastructure equipment
  • Industrial control systems

Procurement Notes

This specific part number is officially obsolete and no longer manufactured by Renesas Electronics Corporation. Verification of current availability should focus on authorized distributors offering surplus stock or approved replacement components. Buyers must confirm the exact suffix variations and environmental compliance status, such as RoHS3, when sourcing equivalent parts from alternative manufacturers like ISSI.

Selection Notes

Engineers selecting this component should note its discontinuation status and evaluate functional equivalents based on pin compatibility and electrical specifications. Key parameters to match include the 128K x 36 organization, 3.3V core voltage, and 100-TQFP footprint. Alternative devices from Integrated Silicon Solution Inc may offer similar performance metrics but require verification of timing characteristics and package dimensions to ensure seamless integration into existing designs.

Part Context

The IDT71V3557 series belongs to Renesas' portfolio of high-speed synchronous SRAMs designed for demanding applications. These devices are characterized by their ability to eliminate dead bus cycles during read-write transitions, enhancing system throughput. The 71V3557 variant specifically targets applications needing wide data buses and moderate density, serving as a bridge between standard SRAMs and more complex memory solutions in telecommunications and computing hardware.

Replacement Considerations

Publicly confirmed substitute part numbers include IS61NLF12836A-7.5TQLI from ISSI and 71V547S100PFGI8 from Renesas. These alternatives share similar organizational structures and package types but may differ in access times or temperature ranges.

71V3557S80PFG71V3557S80PFG
$6.62
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