71V3558S133PF

Memory IC Overview

The IDT71V3558S133PF is a 4.5 Mbit synchronous ZBT SRAM with a 256K x 18 organization, housed in a 100-TQFP package. It operates at a clock frequency of 133 MHz with a 4.2 ns access time and requires a 3.135V to 3.465V supply voltage.

Memory IC Feature Summary

• Supports high-performance system speeds through zero wait state burst operations.
• Features internally synchronized output buffer enable to eliminate external OE control.
• Utilizes positive clock-edge triggered registers for fully pipelined applications.

Memory IC Applications

• High-speed data buffering in telecommunications equipment
• Cache memory in network routers and switches
• Digital signal processing systems requiring low-latency access

Memory IC Procurement Notes

Verify the exact suffix configuration against current Renesas documentation, as legacy IDT part numbers may have specific ordering variations or end-of-life statuses that affect availability and compliance requirements.

Memory IC Selection Notes

Select this component when a 256K x 18 density is required with 133 MHz synchronous performance. Ensure the design accommodates the 100-TQFP footprint and 3.3V I/O levels compatible with standard CMOS logic families.

Memory IC Part Context

This device belongs to the IDT 71V3558 family of 3.3V Synchronous ZBT SRAMs. It offers 4-word burst capability and individual byte write control, providing flexibility for various memory mapping architectures in embedded systems.

Memory IC Replacement Considerations

Check for IDT71V3558XS133PF or IDT71V3558SA133BQGI as potential pin-compatible or functionally equivalent alternatives within the same family, depending on package and temperature range requirements.