71V3559S85BQ

Memory IC Overview

The 71V3559S85BQ is a 4.5Mb synchronous static random access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a parallel interface with an organization of 256K x 18 and an access time of 8.5 ns. The device operates within a supply voltage range of 3.135V to 3.465V and supports surface mount installation in a 165-CABGA package measuring 13x15 mm. It functions at temperatures between 0°C and 70°C.

Memory IC Feature Summary

• Synchronous Single Data Rate (SDR) architecture for high-speed data transfer
• Parallel interface supporting wide data bus configurations
• Zero Bus Transitions (ZBT) technology for reduced power consumption

Memory IC Applications

• High-performance computing systems requiring fast memory access
• Network infrastructure equipment
• Industrial control systems

Memory IC Procurement Notes

Verify component authenticity through authorized channels as the part status is End-of-Life. Confirm RoHS compliance status, which is non-compliant, against specific project requirements. Validate package dimensions and pinout compatibility during integration planning due to the specialized CABGA form factor.

Memory IC Selection Notes

Select this component for applications necessitating synchronous SRAM with wide data buses. Ensure system design accommodates the specific 3.3V operating voltage and thermal constraints. Consider alternative packages if board space or mounting preferences differ from the 165-CABGA specification.

Memory IC Part Context

This device belongs to the IDT 71V3559 family of synchronous SRAMs. It represents a transition period product under Renesas Electronics following their acquisition of Integrated Device Technology (IDT). The part utilizes advanced CMOS technology optimized for performance and density in embedded memory applications.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.