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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:200 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.1 ns
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Overview
The 71V35761S200BGI8 is a synchronous single data rate static random access memory integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 megabits, organized as 128 kilowords by 36 bits. The device supports parallel interface operations with a maximum clock frequency of 200 MHz and features an access time of 3.1 nanoseconds. It operates within a supply voltage range of 3.135 volts to 3.465 volts. The component is housed in a 119-pin plastic ball grid array package measuring 14 by 22 millimeters.
Feature Summary
- Supports high-speed synchronous parallel data transfer for real-time processing applications
- Integrates pipelined architecture to maintain continuous data throughput at elevated clock rates
- Operates on standard 3.3-volt logic levels compatible with common system buses
Applications
- High-performance embedded systems requiring fast local data buffering
- Industrial equipment control units needing reliable volatile memory storage
- Network infrastructure hardware utilizing parallel bus interfaces
Procurement Notes
Verify the exact suffix designation against official manufacturer documentation before procurement. Packaging variations such as tape-and-reel or cut-tape formats may exist but require confirmation from authorized distributors. Ensure the specific part number matches the required pinout and electrical specifications for your design implementation.
Selection Notes
Select this component when a 36-bit wide data path is necessary for system alignment. The 200 MHz speed grade suits designs demanding low latency compared to slower variants. Confirm that the 119-pin BGA footprint fits the available board space and thermal constraints of the target enclosure.
Part Context
This device belongs to the 71V35761SA series of synchronous SRAMs designed for performance-critical environments. It complements microcontroller solutions by providing rapid data access capabilities. The series typically includes various speed grades and packaging options to accommodate different system integration requirements.
Replacement Considerations
Consult official substitution guides for equivalent parts with matching speed grades and pin configurations. Verify compatibility regarding voltage tolerances and interface protocols before implementing any alternative components.
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