A3T21H455W23SR6

RF FETs, MOSFETs Overview

The A3T21H455W23SR6 is an N-Channel Enhancement-Mode Lateral MOSFET RF Power LDMOS Transistor designed for cellular base station applications requiring wide instantaneous bandwidth. It operates within the 2110 to 2200 MHz frequency range and delivers 87 W average output power at 30 Vdc. The device features an asymmetrical Doherty configuration with internal matching on input and output sides, housed in an ACP-1230S-4L2S package.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance integrated Doherty architecture
• Designed for wide instantaneous bandwidth applications
• Capable of withstanding extremely high output VSWR conditions
• Optimized for digital predistortion error correction systems

RF FETs, MOSFETs Applications

• Cellular base station amplifiers
• Wideband RF power amplification
• Doherty amplifier configurations

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R6 corresponds to the required tape and reel packaging specifications before procurement. Confirm that the component meets all RoHS compliance requirements relevant to your manufacturing region. Ensure that the supply chain source provides valid traceability documentation for this semiconductor device.

RF FETs, MOSFETs Selection Notes

Select this transistor when designing asymmetric Doherty amplifiers for the 2110–2200 MHz band. The device requires a single DC power supply as drain terminals are internally tied. Designers must account for the specific gate threshold voltage differences between the carrier and peaking sides during bias network implementation.

RF FETs, MOSFETs Part Context

This component belongs to the Airfast RF Power LDMOS series by NXP Semiconductors. It utilizes silicon technology and is packaged in the ACP-1230S-4L2S format. The part is specifically engineered to support modern digital modulation schemes common in contemporary wireless communication infrastructure.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are documented in the official datasheet.

RF FETs, MOSFETs FAQ

How are the drain terminals connected?

The drain terminals (VDDA and VDDB) must be tied together and powered by a single DC power supply.

What is the maximum operating junction temperature?

The maximum operating junction temperature range extends up to +225 °C.

Is the device internally matched?

Yes, the device is internally matched on both the input and output sides.