A3T23H300W23SR6

RF FETs, MOSFETs Overview

The A3T23H300W23SR6 is an NXP Semiconductors RF Power LDMOS transistor designed for cellular base station applications requiring wide instantaneous bandwidth. Operating within the 2300 to 2400 MHz frequency range, this asymmetrical Doherty device delivers a typical average output power of 63 W at a drain voltage of 30 V DC. It features an internal matching network and utilizes the ACP-1230S-4L2S package. The component supports Class C operation with a negative gate-source voltage range and withstands high output VSWR conditions.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance in-package Doherty architecture
• Designed for wide instantaneous bandwidth applications
• Capable of withstanding extremely high output VSWR and broadband operating conditions
• Optimized for digital predistortion error correction systems

RF FETs, MOSFETs Applications

• Cellular base station amplifiers
• Wide instantaneous bandwidth communication systems
• Digital predistortion linearization circuits

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R6 confirms the 150-unit reel packaging configuration before procurement. Confirm that the ACP-1230S-4L2S package dimensions align with the target PCB footprint. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance values under continuous wave operation conditions.

RF FETs, MOSFETs Selection Notes

Select this component when designing asymmetric Doherty power amplifier stages for the 2300–2400 MHz band. The device requires a single DC power supply as VDDA and VDDB must be tied together internally. Consider the specific gate threshold voltages for carrier and peaking sides when configuring bias networks for optimal efficiency and linearity.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power LDMOS Transistor series from NXP Semiconductors. It is specifically engineered for high-efficiency modulation schemes used in modern wireless infrastructure. The device integrates both carrier and peaking sections into a single package to simplify assembly and improve performance consistency compared to discrete implementations.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the documentation.

RF FETs, MOSFETs FAQ

How must the VDDA and VDDB pins be connected?

VDDA and VDDB must be tied together and powered by a single DC power supply.

What is the maximum operating junction temperature?

The operating junction temperature range extends up to +225 °C.

Are the input and output ports internally matched?

Yes, the device is internally matched on both the input and output ports.