A5G26S008NT6

RF FETs, MOSFETs Overview

The A5G26S008NT6 is an Airfast RF power GaN transistor designed for cellular base station applications covering the frequency range of 2300 to 2690 MHz. It operates at a recommended drain voltage of 48 Vdc and features high terminal impedances for optimal broadband performance. The device is optimized for massive MIMO active antenna systems in 5G infrastructure, offering saturated output power of 10.7 W and power gain up to 20 dB.

RF FETs, MOSFETs Feature Summary

• High terminal impedances for optimal broadband performance
• Designed for low complexity linearization systems
• Universal broadband driver capability
• Optimized for massive MIMO active antenna systems

RF FETs, MOSFETs Applications

• Cellular base station applications
• Massive MIMO active antenna systems
• 5G base station infrastructure

RF FETs, MOSFETs Procurement Notes

Verify the complete part number including the T6 suffix, which indicates tape and reel packaging with 5,000 units per 12 mm wide, 13-inch reel. Confirm the specific revision level of the datasheet against the manufacturer's latest release to ensure alignment with current production specifications and electrical characteristics.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring integrated matching within a DFN package to simplify layout. Ensure the design accommodates the specified gate-source voltage limits and utilizes the exposed backside source terminal for thermal management. Verify that the application environment supports the required operating temperature ranges and adheres to the recommended biasing sequences.

RF FETs, MOSFETs Part Context

This device belongs to NXP Semiconductors' Airfast portfolio of RF power GaN transistors. It is engineered specifically for modern wireless infrastructure, providing high efficiency and ruggedness. The product is manufactured using advanced GaN-on-SiC technology to deliver high power density in a compact footprint suitable for dense array configurations.

RF FETs, MOSFETs Replacement Considerations

Consult official NXP documentation for qualified substitute part numbers. Cross-referencing requires verification of pinout compatibility, impedance matching networks, and thermal resistance values to ensure equivalent performance in the target application.

RF FETs, MOSFETs FAQ

What is the maximum channel temperature rating?

The maximum channel temperature (TCH) is rated at 225 °C.

How is the device packaged?

The A5G26S008N is available in a DFN 4.5 × 4 mm package with an exposed backside source terminal.

What is the typical saturated power output?

The typical saturated power (Psat) is 10.7 W under fast CW conditions.