AFT20P060-4GNR3

RF FETs, MOSFETs Overview

The AFT20P060-4GNR3 is a GaN HEMT RF power device designed for high-efficiency amplification in the 2.1–2.7 GHz frequency range. It delivers 60 W of continuous wave output power at a 28 V supply voltage, achieving a drain efficiency exceeding 55% and a gain of approximately 17 dB. The component utilizes a lead-free, halogen-free RoHS-compliant package suitable for surface-mount assembly.

RF FETs, MOSFETs Feature Summary

• Utilizes Gallium Nitride on Silicon Carbide (GaN-on-SiC) technology for superior thermal conductivity and breakdown voltage.
• Engineered for high linearity and efficiency in broadband radio frequency power amplifier applications.
• Features a robust, hermetically sealed ceramic package optimized for high-power density and reliability.

RF FETs, MOSFETs Applications

• Base station power amplifiers
• Point-to-point microwave communication links
• Electronic warfare systems

RF FETs, MOSFETs Procurement Notes

Verify the specific suffix 'NR3' against the manufacturer's current datasheet to confirm tape-and-reel packaging specifications and lot traceability requirements. Ensure compatibility with standard GaN biasing protocols and impedance matching networks during integration.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring high power density and wide bandwidth operation in the L-band and S-band frequencies. Evaluate thermal management solutions carefully due to the high power dissipation inherent in 60 W GaN devices. Confirm that the system architecture supports the required 28 V operating voltage and gate bias conditions.

RF FETs, MOSFETs Part Context

This part belongs to NXP's AFT series of GaN RF power transistors, which are industry-standard components for telecommunications infrastructure. The series is characterized by its ability to replace older LDMOS technologies while offering higher efficiency and smaller form factors for modern base station architectures.

RF FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements may include other 60 W GaN devices from the same family, such as the AFT20P060-4G, provided the electrical characteristics and package dimensions match exactly. Verify thermal resistance values and maximum ratings before substitution.