AIKQ120N75CP2XKSA1

Single IGBTs Overview

The AIKQ120N75CP2XKSA1 is a short circuit rugged 750 V EDT2 IGBT co-packed with a fast soft recovery diode. It features a collector-emitter blocking voltage of 750 V and a continuous DC collector current of 120 A at Tc = 100°C. The typical collector-emitter saturation voltage is 1.3 V at ICnom = 120 A and 25°C. The device supports a short-circuit withstand time of 5 µs at VCE = 470 V and VGE = 15 V. It utilizes a TO-247PLUS package with high creepage distance.

Single IGBTs Feature Summary

• EDT2 technology providing smooth switching characteristics and low EMI signature
• Co-packed with a fast soft recovery emitter controlled diode
• Positive thermal coefficient for easy paralleling and excellent current sharing
• Qualified according to AEC-Q101 for automotive applications

Single IGBTs Applications

• xEV traction inverter
• DC-link discharge switch
• Automotive aux-drives

Single IGBTs Procurement Notes

Verify the specific ordering suffix XKSA1 against Infineon's official documentation to confirm tube packaging and material content declarations. Ensure the component meets RoHS compliance standards required for the target assembly process. Cross-reference the datasheet revision history to validate that all electrical parameters align with the latest manufacturing specifications before finalizing procurement orders.

Single IGBTs Selection Notes

Select this component for 400 VDC and 470 VDC systems requiring increased overvoltage margins. The tight parameter distribution simplifies gate drive design and reduces the number of devices needed for parallel operation. Evaluate the 5 µs short-circuit robustness against system fault protection requirements. Confirm compatibility with the PG-TO247-3-U01 package dimensions for PCB layout integration.

Single IGBTs Part Context

This part belongs to Infineon's EDT2 discrete IGBT portfolio designed specifically for automotive traction inverters. It serves as a drop-in replacement for previous generation 120 A devices operating at Tc = 100°C. The product line emphasizes high reliability and self-limiting current under short-circuit conditions, supporting the transition to higher power density electric vehicle platforms.

Single IGBTs Replacement Considerations

Officially documented as a drop-in replacement for previous generation 120 A IGBT devices rated at Tc = 100°C. Verify pinout compatibility with the PG-TO247-3-U01 package when substituting older models.