ALD210808ASCL

FET, MOSFET Arrays Overview

The ALD210808ASCL is a precision enhancement mode N-Channel EPAD® MOSFET array manufactured by Advanced Linear Devices Inc. It integrates four monolithic matched pairs in a 16-pin SOIC package. The device features a gate threshold voltage (VGS(th)) of +0.80V ±0.01V at IDS = 10µA and VDS = 0.1V, with an offset voltage (VOS) maximum of 2mV. Key electrical parameters include a drain-source on-resistance (RDS(ON)) of 25Ω at VGS = +5.8V, a forward transconductance (GFS) of 24 mmho, and a breakdown voltage (BVDSX) of 10V. It supports continuous drain current up to 80mA, operates within a temperature range of 0°C to +70°C, and dissipates up to 500mW.

FET, MOSFET Arrays Feature Summary

• Precision factory-matched quad N-Channel MOSFETs utilizing EPAD® CMOS technology for exceptional electrical tracking.
• Enhanced forward and output conductance specifically optimized for operation at very low supply voltages.
• Sub-threshold voltage operation capability enabling nanopower circuit designs with minimal bias currents.
• Excellent temperature tracking characteristics due to monolithic construction, minimizing differential thermal response.

FET, MOSFET Arrays Applications

• Low overhead current mirrors and precision current sources
• Zero power normally-on circuits and fail-safe circuits
• Very low voltage analog and digital signal processing circuits
• High gain differential amplifier input stages
• Energy harvesting detectors and backup battery circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm package type and lead-free status. Confirm that the required operating temperature range aligns with the commercial grade specifications. Ensure proper ESD handling procedures are followed during assembly due to the sensitivity of the CMOS structure. Cross-reference pin configurations with the official datasheet to prevent layout errors.

FET, MOSFET Arrays Selection Notes

Select this component when precise matching between multiple MOSFET channels is critical for circuit performance. Consider the +0.80V threshold voltage requirement for logic level compatibility. Evaluate the sub-threshold leakage characteristics if designing for ultra-low power consumption. Verify that the 16-pin SOIC footprint matches the target PCB design constraints.

FET, MOSFET Arrays Part Context

This device belongs to the ALD2108xx series of EPAD® MOSFET arrays, which are enhanced versions of the earlier ALD1108xx family. It shares architectural similarities with other members like the ALD210800 and ALD210802, differing primarily in the programmed gate threshold voltage value. The series is designed for applications requiring tight parametric control across production lots.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult the manufacturer directly for alternative sourcing options or updated product recommendations.