ALD212900APAL

FET, MOSFET Arrays Overview

The ALD212900APAL is a dual N-Channel EPAD® MOSFET array manufactured by Advanced Linear Devices Inc. in an 8-pin Plastic DIP package. It features Zero Threshold™ technology with a Gate Threshold Voltage (VGS(th)) of 0.00V ± 0.01V at IDS = 20µA and VDS = 0.1V. The device offers a maximum offset voltage (VOS) of 10mV, a typical on-drain current (IDS(ON)) of 79mA at VGS = +3.0V, and a low drain-source on-resistance (RDS(ON)) of 14Ω at VGS = +5.0V. Operating characteristics include a breakdown voltage (BVDSS) of 10V, input capacitance (CISS) of 30pF, and delay times of 10ns for both turn-on and turn-off. The unit supports an operating temperature range from 0°C to +70°C.

FET, MOSFET Arrays Feature Summary

• Precision matched pair configuration with factory-set zero threshold voltage for enhanced matching and temperature tracking.
• Ultra-low subthreshold operation capability enabling nanopower circuit designs with minimal supply voltages.
• High forward transconductance and output conductance optimized for very low supply voltage applications.
• Monolithic construction ensuring tight lot-to-lot parametric control and differential thermal response.

FET, MOSFET Arrays Applications

• Low overhead current mirrors and precision current sources
• Zero power normally-on circuits and energy harvesting systems
• Very low voltage analog and digital signal processing circuits
• Extremely low level voltage clamps and zero-crossing detectors
• High gain differential amplifier input stages

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm package type and lead-free compliance. Confirm that the required operating temperature range aligns with the standard commercial specification limits. Ensure static control procedures are observed during handling due to ESD sensitivity. Cross-reference pin configurations with the official datasheet to prevent integration errors.

FET, MOSFET Arrays Selection Notes

Select this component when precise gate threshold matching and ultra-low leakage currents are critical for circuit stability. Consider the ALD212900 family for applications requiring operation at supply voltages below standard logic levels. Evaluate the trade-off between the low input capacitance and the required switching speed for high-frequency analog signals. Verify that the monolithic matched pair architecture satisfies the thermal tracking requirements of the design.

FET, MOSFET Arrays Part Context

The ALD212900 series belongs to the EPAD® MOSFET family, which utilizes Electrically Programmable Analog Device technology. This family includes various threshold voltage options ranging from depletion to enhancement modes. The ALD212900 specifically addresses the need for zero-threshold matched pairs in low-power analog applications, distinguishing itself from standard discrete MOSFETs through its integrated precision programming and temperature compensation capabilities.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the Zero Threshold™ specification and dual N-Channel configuration. Alternative parts from the same ALD212900 family may differ only in package style or temperature rating. Verify that substitute components maintain the 14Ω RDS(ON) and 10mV max offset voltage limits to ensure circuit performance parity.

FET, MOSFET Arrays FAQ

What is the significance of the Zero Threshold™ feature in the ALD212900?

The Zero Threshold™ feature sets the Gate Threshold Voltage (VGS(th)) precisely at 0.00V, allowing circuits to operate with input/output signals referenced directly to ground at extremely low supply voltages, facilitating nanopower designs.

How does the ALD212900 handle temperature variations?

Built on a single monolithic chip, the matched pair exhibits excellent temperature tracking characteristics. Specific operating points exist where the temperature coefficient of the current is near zero, enhancing circuit stability across the operating temperature range.

What is the maximum continuous drain current for this device?

The typical on-drain current (IDS(ON)) is 79mA when VGS is +3.0V and VDS is +3V. The absolute maximum operating current rating is listed as 80mA.